This laboratory offers different state-of-the-art semiconductor fabrication, processing, and characterization facilities. Members of this interdisciplinary research team study novel low-cost and fast transformative approaches for the synthesis and processing of carbon, III-Nitride, and oxide-based ultrawide bandgap (UWBG) nano/micro-structures and thin films that are needed for next-generation high-power devices for smart grids, electric vehicles, space electronics, cutting tools, quantum electronics, and biomarkers. The disordered carbon is converted into different useful structures of diamond or Q-carbon (a new form of carbon) at ambient temperatures and pressures in the air. From the viewpoint of functional properties, the Q-carbon manifests room-temperature ferromagnetism, extraordinary Hall effect, high electron field emission, and electrochromic characteristics. Ultrahard and superhard diamond, Q-carbon, and DLC can be fabricated on different surfaces for many industrial applications, including but not limited to abrasives, polishing and cutting tools, disc brakes, and wear-resistant and protective coatings. Furthermore, the fabrication facility of wafer-scale high-quality functional reduced graphene oxide on Si has tremendous implications in the field of electronics and next-generation magnetic field sensors.
Recent Posts
- Our recent work on Diamond/AlN integration published in Carbon
- Saif Taqy received Doctoral Merit Fellowship
- Ayesha Tasnim received Samsung Scholarship