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The UWBG Semiconductor Lab at Texas State University, led by Dr. Ariful Haque, is dedicated to advancing the frontiers of micro- and nanoelectronics through cutting-edge research on ultra-wide bandgap (UWBG) semiconductors and their integration into next-generation electronic devices. This interdisciplinary research team investigates fundamental and applied questions surrounding low-cost, rapid, and transformative approaches for the synthesis and processing of carbon-, III-nitride-, and oxide-based UWBG nanostructures and thin films. These UWBG semiconductors are essential for enabling next-generation high-power and high-frequency devices with applications spanning space electronics, electric vehicles, smart grids, cutting tools, quantum electronics, and sensing technologies. The lab’s mission directly supports the growing global demand for high-power and extreme-environment electronics, while contributing to the development of the state-of-the-art technologies that align with the U.S. CHIPS and Science Act and help prepare the future semiconductor workforce.

(i) Heterogeneous Integration of UWBG Materials: Integration of diamond, III-nitrides (GaN, AlN, AlGaN), and β-Ga₂O₃ to engineer high-performance device platforms with superior thermal, electrical, and structural properties.

(ii) Laser-Based Processing of Semiconductors: Using pulsed laser deposition (PLD), pulsed laser annealing (PLA), and submerged laser techniques for doping, defect engineering, and phase-selective processing of carbon-based and oxide and III-Nitride semiconductors.

(iii) Work Function and Electronic Property Engineering: Measurement and engineering of work function, band alignment, and electron transport in UWBG semiconductors to enable low-resistance ohmic contacts and high-quality Schottky barrier diodes, with applications in high-power and high-frequency devices.